Inverse approach to atomistic modeling: Applications to a-Si:H and g-GeSe2
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چکیده
منابع مشابه
Inverse approach to atomistic modeling: Applications to a-Si:H and g-GeSe2
We discuss an inverse approach for atomistic modeling of glassy materials. The focus is on structural modeling and electronic properties of hydrogenated amorphous silicon and glassy GeSe2 alloy. The work is based upon a new approach ‘experimentally constrained molecular relaxation (ECMR)’. Unlike conventional approaches (such as molecular dynamics (MD) and Monte Carlo simulations(MC), where a p...
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ژورنال
عنوان ژورنال: Journal of Non-Crystalline Solids
سال: 2008
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2007.09.043